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APTGT100A120T3AG
Phase leg Trench + Field Stop IGBT Power Module
29 30 31 32 13
VCES = 1200V IC = 100A @ Tc = 100C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
4 3
Features
26 22 27 23 28 25 R1
*
8 7
16
18
19
20
14
28 27 26 25 29 30
23 22
20 19 18 16 15
* * * * *
Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * * * * * Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C
TC = 100C
TC = 25C TC = 25C Tj = 125C
200A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT100A120T3AG - Rev 0
Max ratings 1200 140 100 200 20 595
Unit V A V W
April, 2009
APTGT100A120T3AG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=100A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A RG = 3.9 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C RG = 3.9 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 7200 400 300 0.9 260 30 420 70 290 50 520 90 10 mJ 10 400 A Max Unit pF
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 600V IF = 100A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 125C
Tc = 100C
Min 1200
Typ
Max 350 500
Unit V A A
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.6 1.6 170 280 11 20 4.4 8.2
2.1
V ns C mJ
April, 2009 2-5 APTGT100A120T3AG - Rev 0
di/dt =2300A/s
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APTGT100A120T3AG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.21 0.32 150 125 100 4.7 110 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT100A120T3AG - Rev 0
April, 2009
17
28
APTGT100A120T3AG
Typical Performance Curve
200 Output Characteristics (VGE=15V) Output Characteristics 200 TJ = 125C
TJ=125C
150 IC (A)
TJ=25C
150 IC (A)
VGE=17V
VGE=13V VGE=15V
100
100
VGE=9V
50
50
0 0 1 2 VCE (V) 3 4
0 0 1 2 VCE (V) 3 4
200 175 150 125 IC (A) 100 75 50 25 0 5
Transfert Characteristics
TJ=25C TJ=125C
25 20 E (mJ) 15 10 5 0
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 3.9 TJ = 125C Eon Eoff Er Eon
TJ=125C
6
7
8
9
10
11
12
0
25
50
75
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 25 20 E (mJ) 15 10 5 0 0 5 10 15 20 Gate Resistance (ohms) 25
VCE = 600V VGE =15V IC = 100A TJ = 125C
Eon
Reverse Bias Safe Operating Area 240 200 160
Eoff Er
IC (A)
120 80 40 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=125C RG=3.9
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.24 Thermal Impedance (C/W) 0.2 0.16 0.12 0.08 0.04 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT100A120T3AG - Rev 0
April, 2009
APTGT100A120T3AG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100
ZVS
Forward Characteristic of diode 200
TJ=25C
80 60 40 20 0 0 25 50 IC (A)
ZCS
IF (A)
VCE=600V D=50% RG=3.9 TJ=125C Tc=75C
150
TJ=125C
100
Hard switching
50
TJ=125C
0 75 100 125 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
Diode
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT100A120T3AG - Rev 0
April, 2009

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